All Transistors. 2N3906 Datasheet

 

2N3906 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3906

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.31 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

2N3906 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3906 Datasheet (PDF)

0.1. 2n3905 2n3906.pdf Size:199K _motorola

2N3906
2N3906

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N3905/DGeneral Purpose Transistors2N3905PNP Silicon*2N3906*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1

0.2. 2n3906 3.pdf Size:52K _philips

2N3906
2N3906

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N3906PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 Jun 20Philips Semiconductors Product specificationPNP switching transistor 2N3906FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter High-spe

 0.3. 2n3906.pdf Size:61K _st

2N3906
2N3906

2N3906SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / Shipment2N3906 2N3906 TO-92 / Bulk2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS2N3904TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT

0.4. 2n3906 mmbt3906 pzt3906.pdf Size:106K _fairchild_semi

2N3906
2N3906

2N3906 MMBT3906 PZT3906CCEECC TO-92BBBESOT-223SOT-23Mark: 2APNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Vol

 0.5. 2n3906.pdf Size:148K _fairchild_semi

2N3906
2N3906

October 20112N3906 / MMBT3906 / PZT3906PNP General Purpose AmplifierFeatures This device is designed for general purpose amplifier and switching applications at collector currents of 10A to 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Col

0.6. 2n3905 2n3906.pdf Size:67K _central

2N3906

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.7. 2n3906 to-92.pdf Size:225K _mcc

2N3906
2N3906

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl

0.8. 2n3906.pdf Size:173K _onsemi

2N3906
2N3906

2N3906General PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR Pb-Free Packages are Available*32BASEMAXIMUM RATINGSRating Symbol Value Unit1EMITTERCollector - Emitter Voltage VCEO 40 VdcCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO-92CASE 29Total Device Dissipation @

0.9. 2n3906g.pdf Size:230K _utc

2N3906
2N3906

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box2N3906

0.10. 2n3906.pdf Size:186K _utc

2N3906
2N3906

UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc(MAX)=625mW 1* Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box

0.11. 2n3906n.pdf Size:173K _auk

2N3906
2N3906

2N3906NSemiconductor Semiconductor PNP Silicon TransistorDescriptions General small signal application Switching application Features Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki

0.12. 2n3906.pdf Size:52K _auk

2N3906
2N3906

2N3906SemiconductorSemiconductorPNP Silicon TransistorDescriptions General small signal application Switching applicationFeatures Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904Ordering InformationType NO. Marking Package Code2N3906 2N3906 T0-92Outline Dimensions unit : mm3.450.14.50.12.250

0.13. 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf Size:495K _no

2N3906
2N3906

0.14. 2n3906.pdf Size:376K _secos

2N3906
2N3906

2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) AD Collector Current ICM: -200mA Collector Base Voltage V(BR)CBO: -40V BCLASSIFICATION OF hFE E CFProduct-Rank 2N3906-O 2N3906-YRange 100~

0.15. 2n3906v.pdf Size:92K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=-30V, VEB=-3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8

0.16. 2n3906c.pdf Size:76K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906CTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(

0.17. 2n3906s.pdf Size:51K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15Low Leakage CurrentC 1.30 MAX2: ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20@VCE=-30V, VEB=-3V.1G 1.90H 0.95Excellent DC Current Gain Linearity.J 0.13

0.18. 2n3906u.pdf Size:50K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2Low Leakage Current _+B 1.25 0.15_+C 0.90 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.3+0.10/-0.05_E +2.10 0.20@VCE=-30V, VEB=-3V.G 0.65Excellent DC Current Gain Linearity.H 0.

0.19. 2n3906a.pdf Size:561K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDLow Saturation Voltage D 0.45E 1.00: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.F 1.27G 0.85Low Collect

0.20. 2n3906sc.pdf Size:700K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESLow Leakage Current: ICEX=-50nA(Max.), IBL=-50nA(Max.)@VCE=-30V, VEB=-3V.Excellent DC Current Gain Linearity.Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Complementary to 2N3904SC.MAXIMUM RATING (Ta=25)CHARACTERIST

0.21. 2n3906.pdf Size:51K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage CurrentN DIM MILLIMETERS: ICEX=-50nA(Max.), IBL=-50nA(Max.)A 4.70 MAXEKB 4.80 MAX@VCE=-30V, VEB=-3V. GC 3.70 MAXDExcellent DC Current Gain Linearity.D 0.45E 1.00Low Saturation Voltage F 1.27G 0.85: VCE(sat)=-0.4V(M

0.22. 2n3906e.pdf Size:91K _kec

2N3906
2N3906

SEMICONDUCTOR 2N3906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBDIM MILLIMETERSFEATURES_+A 1.60 0.10DLow Leakage Current _+2 B 0.85 0.10_+C 0.70 0.10: ICEX=-50nA(Max.), IBL=-50nA(Max.)31D 0.27+0.10/-0.05_@VCE=-30V, VEB=-3V. E 1.60 0.10+_+1.00 0.10GExcellent DC Current Gain Linearity.

0.23. 2n3906.pdf Size:307K _lge

2N3906
2N3906

2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note

0.24. 2n3906.pdf Size:541K _wietron

2N3906
2N3906

2N3906PNP General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base VOltage VEBO-5.0 VdcCollector Current IC-200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, T

0.25. h2n3906.pdf Size:51K _hsmc

2N3906
2N3906

Spec. No. : HE6240HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2005.01.14MICROELECTRONICS CORP.Page No. : 1/5H2N3906PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N3906 is designed for general purpose switching and amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......................................................

0.26. 2n3906.pdf Size:245K _shenzhen

2N3906
2N3906

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR

0.27. 2n3906s.pdf Size:199K _first_silicon

2N3906
2N3906

SEMICONDUCTOR2N3906STECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONDevice Marking Shipping22N3906S 2A 3000/Tape & Reel 1SOT23MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40

0.28. 2n3906u.pdf Size:603K _first_silicon

2N3906
2N3906

SEMICONDUCTOR2N3906UTECHNICAL DATAGeneral Purpose Transistors PNP Silicon FEATURESWe declare that the material of product compliant withRoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION3Device Marking Shipping 2N3906U 2A 3000/Tape&Reel12SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25)Parameter Symbol Limits UnitCollectorEmitte

0.29. 2n3906e.pdf Size:387K _first_silicon

2N3906
2N3906

SEMICONDUCTOR2N3906ETECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONShippingDevice Marking22N3906E 2A 3000/Tape & Reel 1SC 89MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 4

0.30. 2n3906 to92.pdf Size:437K _first_silicon

2N3906
2N3906

SEMICONDUCTOR2N3906TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt

0.31. 2n3906-g.pdf Size:69K _comchip

2N3906
2N3906

General Purpose Transistor2N3906-G (PNP)RoHS DeviceTO-92Features -PNP silicon epitaxial planar transistor for 0.185(4.70)switching and amplifier application.0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min.0.055 (1.14)0.020(0.51)0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55)0.015(0.38) -This transistor is available in the S

0.32. 2n3906s.pdf Size:207K _inchange_semiconductor

2N3906
2N3906

isc Silicon PNP Power Transistor 2N3906SDESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )APPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -40 VCBOV Collector-Emitter Voltage -40 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuo

0.33. 2n3906.pdf Size:202K _inchange_semiconductor

2N3906
2N3906

isc Silicon PNP Power Transistor 2N3906DESCRIPTIONLow voltage( max .40V )Low current ( max .200mA )NPN complement to Type 2N3904.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switchingAmplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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