2N3906 Specs and Replacement
The 2N3906 is a widely used PNP bipolar junction transistor designed for low-power general-purpose applications. The device typically handles collector currents up to 200mA and supports collector-emitter voltages up to 40V, making it suitable for signal switching and amplification in analog and digital circuits. With a transition frequency around 250MHz, the 2N3906 performs well in high-speed, low-noise stages. Its gain, generally between 100 and 300, provides stable amplification over a wide temperature range. The transistor's small-signal characteristics and TO92 package make it ideal for compact designs, including sensor interfaces, driver circuits, complementary pairing with the NPN 2N3904.
Type Designator: 2N3906
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 5
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
2N3906 Transistor Equivalent Substitute - Cross-Reference Search
2N3906 detailed specifications
..1. Size:199K motorola
2n3905 2n3906.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 40 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage ... See More ⇒
..2. Size:52K philips
2n3906 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-spe... See More ⇒
..3. Size:61K st
2n3906.pdf
2N3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3906 2N3906 TO-92 / Bulk 2N3906-AP 2N3906 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS 2N3904 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT... See More ⇒
..4. Size:148K fairchild semi
2n3906.pdf
October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2A EBC Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Col... See More ⇒
..5. Size:106K fairchild semi
2n3906 mmbt3906 pzt3906.pdf
2N3906 MMBT3906 PZT3906 C C E E C C TO-92 B B B E SOT-223 SOT-23 Mark 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Vol... See More ⇒
..7. Size:225K mcc
2n3906 to-92.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3906 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Ampl... See More ⇒
..8. Size:785K mcc
2n3906.pdf
2N3906 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 ... See More ⇒
..9. Size:173K onsemi
2n3906.pdf
2N3906 General Purpose Transistors PNP Silicon http //onsemi.com Features COLLECTOR Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @... See More ⇒
..10. Size:498K onsemi
2n3906 mmbt3906 pzt3906.pdf
2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E C B TO-92 SOT-23 SOT-223 B Mark 2A EBC Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3906BU 2N3906 TO-92 3L Bulk 10000... See More ⇒
..11. Size:186K utc
2n3906.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Collector Dissipation Pc(MAX)=625mW 1 * Complementary to UTC 2N3904 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box ... See More ⇒
..12. Size:52K auk
2n3906.pdf
2N3906 Semiconductor Semiconductor PNP Silicon Transistor Descriptions General small signal application Switching application Features Low collector saturation voltage Collector output capacitance Complementary pair with 2N3904 Ordering Information Type NO. Marking Package Code 2N3906 2N3906 T0-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0... See More ⇒
..14. Size:376K secos
2n3906.pdf
2N3906 -0.2A , -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM 625mW (Ta=25 C) A D Collector Current ICM -200mA Collector Base Voltage V(BR)CBO -40V B CLASSIFICATION OF hFE E C F Product-Rank 2N3906-O 2N3906-Y Range 100 ... See More ⇒
..15. Size:3052K jiangsu
2n3906.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR ... See More ⇒
..16. Size:51K kec
2n3906.pdf
SEMICONDUCTOR 2N3906 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.4V(M... See More ⇒
..17. Size:307K lge
2n3906.pdf
2N3906(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3906 MAXIMUM RATINGS (TA=25 unless otherwise note... See More ⇒
..18. Size:541K wietron
2n3906.pdf
2N3906 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, T... See More ⇒
..19. Size:245K shenzhen
2n3906.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1.EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2.BASE Recommended This transistor is also available in the SOT-23 case with 3. COLLECTOR ... See More ⇒
..20. Size:978K blue-rocket-elect
2n3906.pdf
2N3906 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features Low current, Low voltage. / Applications General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1 ... See More ⇒
..21. Size:148K semtech
2n3905 2n3906.pdf
2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol... See More ⇒
..22. Size:437K first silicon
2n3906 to92.pdf
SEMICONDUCTOR 2N3906 TECHNICAL DATA FEATURE TO-92 PNP silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the NPN transistor 2N3904 is Recommended 1.EMITTER 2.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage -40 V VCEO Collector-Emitt... See More ⇒
..23. Size:1737K slkor
2n3906.pdf
2N3906 / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features / Applications Low current, Low voltage. General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector PIN 2 Base PIN 3 Emitter ... See More ⇒
..26. Size:202K inchange semiconductor
2n3906.pdf
isc Silicon PNP Power Transistor 2N3906 DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) NPN complement to Type 2N3904. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
0.1. Size:434K onsemi
2n3906bu 2n3906ta 2n3906tar 2n3906tf 2n3906tfr mmbt3906 pzt3906.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
0.2. Size:230K utc
2n3906g.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage VCEO=40V * Complementary to UTC 2N3904 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2N3906G-AB3-R SOT-89 B C E Tape Reel 2N3906L-T92-B 2N3906G-T92-B TO-92 E B C Tape Box 2N3906... See More ⇒
0.3. Size:173K auk
2n3906n.pdf
2N3906N Semiconductor Semiconductor PNP Silicon Transistor Descriptions General small signal application Switching application Features Low collector-emitter saturation voltage 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marki... See More ⇒
0.4. Size:91K kec
2n3906e.pdf
SEMICONDUCTOR 2N3906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=-30V, VEB=-3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity.... See More ⇒
0.5. Size:76K kec
2n3906c.pdf
SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 VCE(sat)=-0.4V(... See More ⇒
0.6. Size:50K kec
2n3906u.pdf
SEMICONDUCTOR 2N3906U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 ICEX=-50nA(Max.), IBL=-50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=-30V, VEB=-3V. G 0.65 Excellent DC Current Gain Linearity. H 0.... See More ⇒
0.7. Size:92K kec
2n3906v.pdf
SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 ... See More ⇒
0.8. Size:687K kec
2n3906s.pdf
SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + FEATURES A 2.93 0.20 B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ICEX=-50nA(Max.), IBL=-50nA(Max.) E 2.40+0.30/-0.20 1 G 1.90 @VCE=-30V, VEB=-3V. H 0.95 Excellent DC Current Gain Linearity. J 0... See More ⇒
0.9. Size:561K kec
2n3906a.pdf
SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS ICEX=-50nA(Max.), IBL=-50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=-30V, VEB=-3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. F 1.27 G 0.85 Low Collect... See More ⇒
0.10. Size:700K kec
2n3906sc.pdf
SEMICONDUCTOR 2N3906SC TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC. MAXIMUM RATING (Ta=25 ) CHARACTERIST... See More ⇒
0.11. Size:51K hsmc
h2n3906.pdf
Spec. No. HE6240 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2005.01.14 MICROELECTRONICS CORP. Page No. 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature......................................................... See More ⇒
0.12. Size:387K first silicon
2n3906e.pdf
SEMICONDUCTOR 2N3906E TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Shipping Device Marking 2 2N3906E 2A 3000/Tape & Reel 1 SC 89 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 4... See More ⇒
0.13. Size:603K first silicon
2n3906u.pdf
SEMICONDUCTOR 2N3906U TECHNICAL DATA General Purpose Transistors PNP Silicon FEATURES We declare that the material of product compliant with RoHS requirements and Halogen Free. DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping 2N3906U 2A 3000/Tape&Reel 1 2 SC-70 / SOT 323 MAXIMUM RATINGS(Ta = 25 ) Parameter Symbol Limits Unit Collector Emitte... See More ⇒
0.14. Size:199K first silicon
2n3906s.pdf
SEMICONDUCTOR 2N3906S TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping 2 2N3906S 2A 3000/Tape & Reel 1 SOT 23 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 40... See More ⇒
0.15. Size:69K comchip
2n3906-g.pdf
General Purpose Transistor 2N3906-G (PNP) RoHS Device TO-92 Features -PNP silicon epitaxial planar transistor for 0.185(4.70) switching and amplifier application. 0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min. 0.055 (1.14) 0.020(0.51) 0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55) 0.015(0.38) -This transistor is available in the S... See More ⇒
0.16. Size:1422K cn cbi
2n3906u.pdf
Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltage MARKING 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Th... See More ⇒
0.17. Size:207K inchange semiconductor
2n3906s.pdf
isc Silicon PNP Power Transistor 2N3906S DESCRIPTION Low voltage( max .40V ) Low current ( max .200mA ) APPLICATIONS Designed for high-speed switching Amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuo... See More ⇒
Detailed specifications: 2N3901
, 2N3902
, 2N3903
, 2N3904
, 2N3904CSM
, 2N3904DCSM
, 2N3905
, 2N3905CSM
, 8050
, 2N3906CSM
, 2N3907
, 2N3908
, 2N391
, 2N3910
, 2N3911
, 2N3912
, 2N3913
.
History: KT692A
| KSD1691Q
| 2SC1815BL
| 2SA535
Keywords - 2N3906 transistor specs
2N3906 cross reference
2N3906 equivalent finder
2N3906 lookup
2N3906 substitution
2N3906 replacement
