KSB1116L Datasheet. Specs and Replacement

Type Designator: KSB1116L

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO92

 KSB1116L Substitution

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KSB1116L datasheet

 7.1. Size:52K  fairchild semi

ksb1116s.pdf pdf_icon

KSB1116L

KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -1 A ICP * Collector Curren... See More ⇒

 7.2. Size:52K  fairchild semi

ksb1116 a.pdf pdf_icon

KSB1116L

KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage KSB1116 -60 V KSB1116A -80 V VCEO Collector-Emitter Voltage KSB1116 -50 V KSB111... See More ⇒

 9.1. Size:430K  fairchild semi

ksb1121.pdf pdf_icon

KSB1116L

July 2005 KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Pa... See More ⇒

 9.2. Size:46K  fairchild semi

ksb1149.pdf pdf_icon

KSB1116L

KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C High DC Current Gain High Power Dissipation PC=1.3W (Ta=25 C) TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEB... See More ⇒

Detailed specifications: KSB1098R, KSB1098Y, KSB1116, KSB1116A, KSB1116AG, KSB1116AL, KSB1116AY, KSB1116G, MJE340, KSB1116Y, KSB1121, KSB1121R, KSB1121S, KSB1121T, KSB1121U, KSB1149, KSB1149O

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