KSB601O Datasheet. Specs and Replacement

Type Designator: KSB601O

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: TO220

 KSB601O Substitution

- BJT ⓘ Cross-Reference Search

 

KSB601O datasheet

 8.1. Size:48K  fairchild semi

 ksb601.pdf pdf_icon

KSB601O

KSB601 Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC C... See More ⇒

Detailed specifications: KSB564, KSB564A, KSB564AG, KSB564AO, KSB564AY, KSB595, KSB596, KSB601, NJW0281G, KSB601R, KSB707, KSB707O, KSB707R, KSB707Y, KSB708, KSB708O, KSB708R

Keywords - KSB601O pdf specs

 KSB601O cross reference

 KSB601O equivalent finder

 KSB601O pdf lookup

 KSB601O substitution

 KSB601O replacement