All Transistors. KSB601O Datasheet

 

KSB601O Datasheet and Replacement


   Type Designator: KSB601O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO220
 

 KSB601O Substitution

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KSB601O Datasheet (PDF)

 8.1. Size:48K  fairchild semi
 ksb601.pdf pdf_icon

KSB601O

KSB601Low Frequency Power Amplifier Medium Speed Switching Industrial Use Complement to KSD560TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 100 VVCEO Collector-Emitter Voltage - 100 VVEBO Emitter-Base Voltage - 7 VIC C

Datasheet: KSB564 , KSB564A , KSB564AG , KSB564AO , KSB564AY , KSB595 , KSB596 , KSB601 , D965 , KSB601R , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 , KSB708O , KSB708R .

Keywords - KSB601O transistor datasheet

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