KSB708O Datasheet. Specs and Replacement

Type Designator: KSB708O  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220

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KSB708O datasheet

 8.1. Size:57K  fairchild semi

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KSB708O

KSB707/708 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSD568/569 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage B707 - 60 V B708 - 80 V VEBO Emitter-Ba... See More ⇒

Detailed specifications: KSB601, KSB601O, KSB601R, KSB707, KSB707O, KSB707R, KSB707Y, KSB708, BC556, KSB708R, KSB708Y, KSB744, KSB744A, KSB744AO, KSB744AR, KSB744AY, KSB744O

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