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KSB708O Specs and Replacement


   Type Designator: KSB708O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220

 KSB708O Transistor Equivalent Substitute - Cross-Reference Search

   

KSB708O detailed specifications

 8.1. Size:57K  fairchild semi
 ksb707 ksb708.pdf pdf_icon

KSB708O

KSB707/708 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSD568/569 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage B707 - 60 V B708 - 80 V VEBO Emitter-Ba... See More ⇒

Detailed specifications: KSB601 , KSB601O , KSB601R , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 , BC556 , KSB708R , KSB708Y , KSB744 , KSB744A , KSB744AO , KSB744AR , KSB744AY , KSB744O .

History: 2SD310

Keywords - KSB708O transistor specs

 KSB708O cross reference
 KSB708O equivalent finder
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