KSB708R Datasheet, Equivalent, Cross Reference Search
Type Designator: KSB708R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
KSB708R Transistor Equivalent Substitute - Cross-Reference Search
KSB708R Datasheet (PDF)
8.1. Size:57K fairchild semi
ksb707 ksb708.pdf
ksb707 ksb708.pdf
KSB707/708Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSD568/569TO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage - 80 VVCEO Collector-Emitter Voltage : B707 - 60 V : B708 - 80 VVEBO Emitter-Ba
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
