KSB708Y Specs and Replacement
Type Designator: KSB708Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
KSB708Y Transistor Equivalent Substitute - Cross-Reference Search
KSB708Y detailed specifications
ksb707 ksb708.pdf
KSB707/708 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSD568/569 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 80 V VCEO Collector-Emitter Voltage B707 - 60 V B708 - 80 V VEBO Emitter-Ba... See More ⇒
Detailed specifications: KSB601R , KSB707 , KSB707O , KSB707R , KSB707Y , KSB708 , KSB708O , KSB708R , 2SD669 , KSB744 , KSB744A , KSB744AO , KSB744AR , KSB744AY , KSB744O , KSB744R , KSB744Y .
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