KSB795Y Specs and Replacement
Type Designator: KSB795Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: TO126
KSB795Y Transistor Equivalent Substitute - Cross-Reference Search
KSB795Y detailed specifications
ksb798.pdf
July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Collector Current IC = -1A Collector Power Dissipation PC = 2W Marking 7 9 8 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VC... See More ⇒
Detailed specifications: KSB772Y , KSB794 , KSB794O , KSB794R , KSB794Y , KSB795 , KSB795O , KSB795R , 2SC5200 , KSB810 , KSB810G , KSB810O , KSB810Y , KSB811 , KSB811G , KSB811O , KSB811Y .
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