KSB907 Datasheet. Specs and Replacement
Type Designator: KSB907 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: TO252
📄📄 Copy
KSB907 Substitution
- BJT ⓘ Cross-Reference Search
KSB907 datasheet
KSB907 Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V V... See More ⇒
KSB906 Low Frequency Power Amplifier Low Collector- Emitter Saturation Voltage Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Col... See More ⇒
Detailed specifications: KSB817O, KSB817Y, KSB834, KSB834O, KSB834Y, KSB906, KSB906O, KSB906Y, 13007, KSC1008, KSC1008G, KSC1008R, KSC1008Y, KSC1009, KSC1009G, KSC1009R, KSC1009Y
Keywords - KSB907 pdf specs
KSB907 cross reference
KSB907 equivalent finder
KSB907 pdf lookup
KSB907 substitution
KSB907 replacement
