All Transistors. KSC1173O Datasheet

 

KSC1173O Datasheet and Replacement


   Type Designator: KSC1173O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
 

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KSC1173O Datasheet (PDF)

 7.1. Size:248K  fairchild semi
 ksc1173.pdf pdf_icon

KSC1173O

August 2009KSC1173 NPN Epitaxial Silicon TransistorFeatures Low Frequency Power Amplifier, Power Regulator Collector Current : IC=3A Collector Dissipation : PC=10W (TC=25C) Complement to KSA473TO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC

 9.1. Size:48K  fairchild semi
 ksc1187.pdf pdf_icon

KSC1173O

KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - KSC1173O transistor datasheet

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