KSC2334Y Datasheet. Specs and Replacement
Type Designator: KSC2334Y 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
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KSC2334Y datasheet
KSC2334 High Speed Switching Industrial Use Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC2334 DESCRIPTION With TO-220 package Complement to type KSA1010 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3... See More ⇒
Detailed specifications: KSC2331Y, KSC2333, KSC2333O, KSC2333R, KSC2333Y, KSC2334, KSC2334O, KSC2334R, S8550, KSC2335, KSC2335F, KSC2335O, KSC2335R, KSC2335Y, KSC2340, KSC2383, KSC2383O
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BJT Parameters and How They Relate
History: MD2219AFHXV | BD135 | KSC2334R | KT712A | KSC2334
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