KSC2517O Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC2517O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
KSC2517O Transistor Equivalent Substitute - Cross-Reference Search
KSC2517O Datasheet (PDF)
ksc2500.pdf
KSC2500Medium Power Amplifier & Low SaturationTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVCEO Collector-Emitter Voltage 10 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 2 AICP * Co
ksc2500.pdf
KSC2500 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER AMPLIFIERTO-92LLOW SATURATIONABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCES 30 VCollector-Emitter Voltage VCBO 10 VEmitter-Base Voltage VEBO 6 VCollector Current (DC) IC 2 ACollector Current (Pulse) IC 5 ABase Current AIB 0.5Collecto
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
