All Transistors. KSC3552R Datasheet

 

KSC3552R Datasheet and Replacement


   Type Designator: KSC3552R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 215 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3P
      - BJT Cross-Reference Search

   

KSC3552R Datasheet (PDF)

 7.1. Size:55K  fairchild semi
ksc3552.pdf pdf_icon

KSC3552R

KSC3552High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 12 AICP Collector Current (

 9.1. Size:153K  fairchild semi
ksc3503 2sc3503.pdf pdf_icon

KSC3552R

March 20082SC3503/KSC3503NPN Epitaxial Silicon TransistorApplications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30VTO-1261 Excellent Gain Linearity for low THD1. Emitter 2.Collector 3.Base High Frequency:

 9.2. Size:56K  fairchild semi
ksc3503.pdf pdf_icon

KSC3552R

KSC3503CRT Display, Video Output High Voltage : VCEO=300V Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V

 9.3. Size:58K  fairchild semi
ksc3502.pdf pdf_icon

KSC3552R

KSC3502CRT Display, Video Output High Voltage : VCEO=200V Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30VTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CHDTA115TEGP | UN621K | ZTX300 | D11C1053 | KRA567U | BD544D | SK3124A

Keywords - KSC3552R transistor datasheet

 KSC3552R cross reference
 KSC3552R equivalent finder
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