KSC5021R Datasheet and Replacement

October 2008KSC5021NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOATO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value Units 800 VVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 7 VVEBO Emitter-Base Voltage 5 AIC C

KSC5021 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHING : tf = 0.1 (Typ)WIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A1.Base 2.Collec

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO