2N3950 Specs and Replacement
Type Designator: 2N3950
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 120 pF
Package: TO60
2N3950 Substitution
- BJT ⓘ Cross-Reference Search
2N3950 datasheet
2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 1.0 to 4.5 50 1 50 25 FEATURES BENEFITS APPLICATIONS D Monolithic Design D Tight Differential Match vs. Current D Wideband Differential Amps D High Slew Rate D Improved Op Amp Speed, Settling Time D High-Speed, Accuracy Temp-... See More ⇒
Databook.fxp 1/14/99 11 29 AM Page B-5 01/99 B-5 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Tem... See More ⇒
Databook.fxp 1/14/99 11 30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Low and Medium Frequency Reverse Gate Source & Reverse Gate Drain Voltage 50 V Differential Amplifiers Gate Current 50 mA High Input Impedance Total Device Power Dissipation (each side) 250 mW @ 85 C Case Temperature... See More ⇒
Detailed specifications: 2N3943 , 2N3944 , 2N3945 , 2N3946 , 2N3947 , 2N3948 , 2N394A , 2N395 , S9018 , 2N3953 , 2N3959 , 2N396 , 2N3960 , 2N3960UB , 2N3961 , 2N3962 , 2N3962CSM .
History: 2N3933 | 2SA893AF | 2N394
Keywords - 2N3950 pdf specs
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History: 2N3933 | 2SA893AF | 2N394
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