KSC5030 PDF Specs and Replacement
Type Designator: KSC5030
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1100 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3P
KSC5030 Substitution
KSC5030 PDF detailed specifications
ksc5030f.pdf
KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collect... See More ⇒
ksc5030pwd.pdf
KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25 ... See More ⇒
ksc5030f.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Col... See More ⇒
Detailed specifications: KSC5028 , KSC5028N , KSC5028O , KSC5028R , KSC5029 , KSC5029N , KSC5029O , KSC5029R , 2SD718 , KSC5030F , KSC5030N , KSC5030O , KSC5030R , KSC5031 , KSC5031N , KSC5031O , KSC5031R .
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