KSC5048 Datasheet and Replacement

   Type Designator: KSC5048
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO247

KSC5048 Substitution

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KSC5048 Datasheet (PDF)

8.1. Size:56K fairchild semi
ksc5042f.pdf pdf_icon

KSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliabilityTO-220F11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150

9.1. Size:58K fairchild semi
ksc5024.pdf pdf_icon

KSC5024High Voltage and High Reliabilty High Speed Switching Wide SOATO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 VVEBO Emitter- Base Voltage 7 VIC Collector Current (DC) 10 AICP Collector Current (

9.2. Size:64K fairchild semi
ksc5086 .pdf pdf_icon

KSC5086HIgh Definition Color Display Horizontal Equivalent CircuitDeflection Output C(Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.)BTO-3PF150 typ. 1.Base 2.Collector 3.EmitterENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value

9.3. Size:302K fairchild semi
ksc5021.pdf pdf_icon

October 2008KSC5021NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOATO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value Units 800 VVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 7 VVEBO Emitter-Base Voltage 5 AIC C

9.4. Size:142K fairchild semi
ksc5030f.pdf pdf_icon

KSC5030FHigh Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating AreaTO-3PF11.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (DC) 6 AICP * Collector Current (Pulse) 20 APC Collect

9.5. Size:54K fairchild semi
ksc5039.pdf pdf_icon

KSC5039High Voltage Power Switch Switching ApplicationTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 AIB Base

9.6. Size:120K fairchild semi
ksc5026m.pdf pdf_icon

January 2011KSC5026MNPN Silicon TransistorFeatures High Voltage and High Reliability High Speed Switching Wide SOATO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1100 VVCEO Collector-Emitter Voltage 800 VVEBO Emitter-Base Voltage 7 VIC Collector Current (D

9.7. Size:38K fairchild semi
ksc5019.pdf pdf_icon

KSC5019Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mATO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVCEO Collector-Emitter Voltage 10 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 2 A

9.8. Size:58K fairchild semi
ksc5039f.pdf pdf_icon

KSC5039FHigh Voltage Power Switch Switching ApplicationTO-220F11.Base 2.Collector 3.EmitterNPN Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A

9.9. Size:53K fairchild semi
ksc5027.pdf pdf_icon

KSC5027High Voltage and High Reliability High Speed Switching Wide SOATO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre

9.10. Size:20K samsung
ksc5086.pdf pdf_icon

NPN TRIPLE DIFFUSEDKSC5086 PLANAR SILICON TRANSISTORHIGH DEFINITION COLOR DISPLAYTO-3PFHORIZONTAL DEFLECTION OUTPUT(DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ)ABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltag

9.11. Size:24K samsung
ksc5030pwd.pdf pdf_icon

KSC5030 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILTYTO-3PHIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25

9.12. Size:74K samsung
ksc5027f.pdf pdf_icon

KSC5027F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYHIGH SPEED SWITCHINGTO-220FWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC

9.13. Size:23K samsung
ksc5039.pdf pdf_icon

KSC5039 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATIONABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W1.Base

9.14. Size:72K samsung
ksc5021p.pdf pdf_icon

KSC5021 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHING : tf = 0.1 (Typ)WIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A1.Base 2.Collec

9.15. Size:24K samsung
ksc5039f.pdf pdf_icon

KSC5039F NPN PLANAR SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATION TO-220FABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W

9.16. Size:24K samsung
ksc5027.pdf pdf_icon

KSC5027 NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220HIGH SPEED SWITCHINGWIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A1.Base 2.Collector 3.Emitter

9.17. Size:226K onsemi
ksc5026m.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.18. Size:235K onsemi
ksc5027.pdf pdf_icon

9.19. Size:109K inchange semiconductor
ksc5031.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 1100V(Min) Fast Switching speed Wide Area of Safe Operation High Reliability APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltag

9.20. Size:130K inchange semiconductor
ksc5086.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5086 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed Built-in Damper Diode APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCB

9.21. Size:125K inchange semiconductor
ksc5089.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5089 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1

9.22. Size:87K inchange semiconductor
ksc5021.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

9.23. Size:215K inchange semiconductor
ksc5027f.pdf pdf_icon

isc Silicon NPN Power Transistor KSC5027FDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUT

9.24. Size:116K inchange semiconductor
ksc5030f.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col

9.25. Size:138K inchange semiconductor
ksc5039.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec

9.26. Size:103K inchange semiconductor
ksc5088.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1

9.27. Size:88K inchange semiconductor
ksc5027.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION With TO-220C package High voltage and high reliability High speed switching Wide area of safe operation PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .