KSC5367 Datasheet and Replacement

NPN TRIPLE DIFFUSEDKSC5367 PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220 High speed Switching Wide Safe Operating Area High Collector Base VoltageABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse I

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5367 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collect

NPN TRIPLE DIFFUSEDKSC5367F PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY High speed Switching TO-220F Wide Safe Operating Area High Collector Base VoltageABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse

May 2010KSC5338D/KSC5338DWNPN Triple Diffused Planar Silicon TransistorFeatures High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAKEquivalent CircuitD2-PAKC1BTO-220E11.Base 2.Coll

KSC5386High Voltage Color Display Horizontal Equivalent CircuitCDeflection Output (Damper Diode Built In) High Collector-Base Breakdown Voltage : BVCBO=1500VBTO-3PF High Speed Switching : tF=0.1s (Typ)1 Wide S.O.A50 typ. 1.Base 2.Collector 3.Emitter For C-Monitor (48KHz)ENPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings unless

May 2010KSC5305DNPN Silicon TransistorFeatures High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equival

KSC5338D NPN SILICON TRANSISTORTO-220HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spreadABSOLUTE MIXIMUM RATINGCharacteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 VInternal schematic diagram

NPN TRIPLE DIFFUSEDKSC5321F PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220F High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 APu

KSC5337F NPN SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHINGTO-220F WIDE SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Vltage VCBO 700V Collector-Emitter Voltage V CEO 400V Emitter-Base Voltage VEBO 9A Collector Current (DC) IC 8A Collector Current (Pulse) IC 15A Base Current IB 4W Collector Di

NPN TRIPLE DIFFUSEDKSC5321 PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220 High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 A1.Ba

KSC5338F NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHSWITCHING APPLICATIONTO-220F High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A1

NPN TRIPLE DIFFUSEDKSC5337 PLANER SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATION High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Voltage VCBO 700V Collector-Emitter Voltage VCEO 400V Emitter-Base Voltage VEBO 9A Collector Current (DC) IC 8A Collector Current (Pulse) IC 15A

KSC5338 NPN SILICON TRANSISTORHIGH VOLTAGE POWER SWITCHTO-220SWITCHING APPLICATION High Speed Switching Wide SOAABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc Silicon NPN Power Transistor KSC5338DDESCRIPTIONCollectorEmitter Sustaining VoltageV 450V(Min)CEO:Low Collector Saturation Voltage: V = 0.5V(Max.)@ I = 0.8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR) CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5386 DESCRIPTION High Collector-Base Voltage- : VCBO = 1500V(Min) High Switching Speed Built-in Damper Diode APPLICATIONS Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5337 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR) CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR) CEO= 450V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec