KSC815 Specs and Replacement
Type Designator: KSC815
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
KSC815 Substitution
KSC815 detailed specifications
ksc815.pdf
KSC815 Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Volta... See More ⇒
Detailed specifications: KSC5327 , KSC5328 , KSC5337 , KSC5337F , KSC5338 , KSC5338F , KSC5367 , KSC5367F , 2N4401 , KSC815G , KSC815O , KSC815R , KSC815Y , KSC838 , KSC838O , KSC838R , KSC838Y .
History: KSC5338F
Keywords - KSC815 transistor specs
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