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KSC815O Specs and Replacement


   Type Designator: KSC815O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92
 

 KSC815O Substitution

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KSC815O detailed specifications

 8.1. Size:38K  fairchild semi
 ksc815.pdf pdf_icon

KSC815O

KSC815 Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Volta... See More ⇒

Detailed specifications: KSC5337 , KSC5337F , KSC5338 , KSC5338F , KSC5367 , KSC5367F , KSC815 , KSC815G , 2SC5198 , KSC815R , KSC815Y , KSC838 , KSC838O , KSC838R , KSC838Y , KSC839 , KSC839G .

Keywords - KSC815O transistor specs

 KSC815O cross reference
 KSC815O equivalent finder
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