All Transistors. KSC815R Equivalents Search

 

KSC815R Specs and Replacement


   Type Designator: KSC815R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
 

 KSC815R Substitution

   - BJT ⓘ Cross-Reference Search

   

KSC815R detailed specifications

 8.1. Size:38K  fairchild semi
 ksc815.pdf pdf_icon

KSC815R

KSC815 Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Volta... See More ⇒

Detailed specifications: KSC5337F , KSC5338 , KSC5338F , KSC5367 , KSC5367F , KSC815 , KSC815G , KSC815O , NJW0281G , KSC815Y , KSC838 , KSC838O , KSC838R , KSC838Y , KSC839 , KSC839G , KSC839O .

History: KSC838O

Keywords - KSC815R transistor specs

 KSC815R cross reference
 KSC815R equivalent finder
 KSC815R lookup
 KSC815R substitution
 KSC815R replacement

 

 
Back to Top

 


 
.