KSC815Y Specs and Replacement

Type Designator: KSC815Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

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KSC815Y datasheet

 8.1. Size:38K  fairchild semi

ksc815.pdf pdf_icon

KSC815Y

KSC815 Low Frequency Amplifier & High Frequency Oscillator Collector-Base Voltage VCBO=60V Complement to KSA539 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Volta... See More ⇒

Detailed specifications: KSC5338, KSC5338F, KSC5367, KSC5367F, KSC815, KSC815G, KSC815O, KSC815R, D965, KSC838, KSC838O, KSC838R, KSC838Y, KSC839, KSC839G, KSC839O, KSC839R

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