2N3962 Specs and Replacement
Type Designator: 2N3962
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO18
2N3962 Substitution
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2N3962 datasheet
2N3964DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.0... See More ⇒
Data Sheet No. 2N3960 Generic Part Number Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF MIL-PRF-19500/399 Qual Level JAN - JANTXV Features General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.... See More ⇒
Detailed specifications: 2N395 , 2N3950 , 2N3953 , 2N3959 , 2N396 , 2N3960 , 2N3960UB , 2N3961 , A42 , 2N3962CSM , 2N3963 , 2N3963CSM , 2N3964 , 2N3964CSM , 2N3965 , 2N3965CSM , 2N396A .
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