KSC900L Datasheet. Specs and Replacement
Type Designator: KSC900L 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 350
Package: TO92
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KSC900L datasheet
KSC900 Low Frequency & Low Noise Amplifier Collector-Base Voltage VCBO=30V Low Noise Level NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V... See More ⇒
Detailed specifications: KSC839, KSC839G, KSC839O, KSC839R, KSC839Y, KSC853, KSC900, KSC900G, MPSA42, KSC900V, KSC900Y, KSC921, KSC945, KSC945G, KSC945L, KSC945O, KSC945R
Keywords - KSC900L pdf specs
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BJT Parameters and How They Relate
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