All Transistors. KSC900V Datasheet

 

KSC900V Datasheet, Equivalent, Cross Reference Search

Type Designator: KSC900V

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

Package: TO92

KSC900V Transistor Equivalent Substitute - Cross-Reference Search

 

KSC900V Datasheet (PDF)

4.1. ksc900.pdf Size:40K _fairchild_semi

KSC900V
KSC900V

KSC900 Low Frequency & Low Noise Amplifier Collector-Base Voltage : VCBO=30V Low Noise Level : NL=50mV (MAX) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collect

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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