KSD1021O Specs and Replacement
Type Designator: KSD1021O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
KSD1021O Substitution
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KSD1021O datasheet
KSD1021 Audio Frequency Power Amplifier Complement to KSB811 Collector Current IC=1A Collector Dissipation PC=350mW TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Vo... See More ⇒
KSD1021 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92 Complement to KSB811 Collector Current IC=1A Collector Dissipation PC=350mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Collector Dissipation ... See More ⇒
KSD1020 Audio Frequency Amplifier Complement to KSB810 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 700 mA ICP * Collector Current (Puls... See More ⇒
Detailed specifications: KSC945O, KSC945R, KSC945Y, KSD1020, KSD1020G, KSD1020Y, KSD1021, KSD1021G, BC547, KSD1021Y, KSD1047, KSD1047O, KSD1047Y, KSD1221, KSD1221G, KSD1221O, KSD1221Y
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