KSD1273Q Datasheet. Specs and Replacement
Type Designator: KSD1273Q 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO220
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KSD1273Q Substitution
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KSD1273Q datasheet
KSD1273 High hFE, AF Power Amplifier Full PAK Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage ... See More ⇒
KSD1221 Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB906 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector C... See More ⇒
KSD1222 Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO... See More ⇒
Detailed specifications: KSD1221, KSD1221G, KSD1221O, KSD1221Y, KSD1222, KSD1273, KSD1273O, KSD1273P, C5198, KSD1362, KSD1362N, KSD1362O, KSD1362R, KSD1406, KSD1406G, KSD1406O, KSD1406Y
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BJT Parameters and How They Relate
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