2N3964 Datasheet. Specs and Replacement

Type Designator: 2N3964  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO18

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2N3964 datasheet

 0.1. Size:10K  semelab

 2n3964dcsm.pdf pdf_icon

2N3964

2N3964DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 0.13 A = 1.27 0.13 I = 0.2A C (0.0... See More ⇒

 9.1. Size:238K  rca

 2n396-a.pdf pdf_icon

2N3964

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 9.2. Size:43K  microelectronics

 2n3962.pdf pdf_icon

2N3964

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 9.3. Size:43K  semicoa

 2n3960.pdf pdf_icon

2N3964

Data Sheet No. 2N3960 Generic Part Number Type 2N3960 2N3960 Geometry 0003 Polarity NPN REF MIL-PRF-19500/399 Qual Level JAN - JANTXV Features General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.... See More ⇒

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Detailed specifications: 2N396, 2N3960, 2N3960UB, 2N3961, 2N3962, 2N3962CSM, 2N3963, 2N3963CSM, BD222, 2N3964CSM, 2N3965, 2N3965CSM, 2N396A, 2N397, 2N3973, 2N3974, 2N3975

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