KSD1417 PDF and Equivalents Search

 

KSD1417 PDF Specs and Replacement


   Type Designator: KSD1417
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO220
 

 KSD1417 Substitution

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KSD1417 PDF detailed specifications

 ..1. Size:48K  fairchild semi
 ksd1417.pdf pdf_icon

KSD1417

KSD1417 High Power Switching Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSB1022 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba... See More ⇒

 8.1. Size:119K  fairchild semi
 ksd1413.pdf pdf_icon

KSD1417

Power Amplifier Applications Power Amplifier Applications Power Amplifier Applications Power Amplifier Applications High DC Current Gain Low Collector- Emitter Saturation Voltage Complement to KSB1023 TO-220F 1. Base 2. Collector 3. Emitter NPN Silicon Darlington Transistor NPN Silicon Darlington Transistor NPN Silicon Darlingt... See More ⇒

 9.1. Size:46K  fairchild semi
 ksd1406.pdf pdf_icon

KSD1417

KSD1406 Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB1015 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Cu... See More ⇒

 9.2. Size:49K  fairchild semi
 ksd1408.pdf pdf_icon

KSD1417

KSD1408 Power Amplifier Applications Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC Collector ... See More ⇒

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Detailed specifications: KSD1406G , KSD1406O , KSD1406Y , KSD1408 , KSD1408O , KSD1408R , KSD1408Y , KSD1413 , A1941 , KSD1588 , KSD1588O , KSD1588R , KSD1588Y , KSD1589 , KSD1589O , KSD1589R , KSD1589Y .

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