KSD1588R Datasheet. Specs and Replacement
Type Designator: KSD1588R 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
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KSD1588R datasheet
KSD1588 Low Frequency Power Amplifier Low Speed Switching Complement to KSB1097 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
KSD1589 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB1098 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units Equivalent Circuit C VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V ... See More ⇒
Detailed specifications: KSD1408, KSD1408O, KSD1408R, KSD1408Y, KSD1413, KSD1417, KSD1588, KSD1588O, 2SD718, KSD1588Y, KSD1589, KSD1589O, KSD1589R, KSD1589Y, KSD1616, KSD1616A, KSD1616AG
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BJT Parameters and How They Relate
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