2N3965 Datasheet and Replacement
Type Designator: 2N3965
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO18
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2N3965 Datasheet (PDF)
2n3964dcsm.pdf

2N3964DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.0
2n3960.pdf

Data Sheet No. 2N3960Generic Part Number:Type 2N39602N3960Geometry 0003Polarity NPNREF: MIL-PRF-19500/399Qual Level: JAN - JANTXVFeatures: General-purpose low-power NPNsilicon transistor. Housed in TO-18 case. Also available in chip form usingthe 0003 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/399 whichSemicoa meets in all cases.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KSD5010 | CHDTC643TUGP | 2SB158 | 2N5927 | 2SD1408O | 2N5684 | 2SA929
Keywords - 2N3965 transistor datasheet
2N3965 cross reference
2N3965 equivalent finder
2N3965 lookup
2N3965 substitution
2N3965 replacement
History: KSD5010 | CHDTC643TUGP | 2SB158 | 2N5927 | 2SD1408O | 2N5684 | 2SA929



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