2N396A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N396A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
2N396A Transistor Equivalent Substitute - Cross-Reference Search
2N396A Datasheet (PDF)
2n3964dcsm.pdf
2N3964DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 45V CEO6.22 0.13 A = 1.27 0.13I = 0.2A C(0.0
2n3960.pdf
Data Sheet No. 2N3960Generic Part Number:Type 2N39602N3960Geometry 0003Polarity NPNREF: MIL-PRF-19500/399Qual Level: JAN - JANTXVFeatures: General-purpose low-power NPNsilicon transistor. Housed in TO-18 case. Also available in chip form usingthe 0003 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/399 whichSemicoa meets in all cases.
Datasheet: 2N3962 , 2N3962CSM , 2N3963 , 2N3963CSM , 2N3964 , 2N3964CSM , 2N3965 , 2N3965CSM , C1815 , 2N397 , 2N3973 , 2N3974 , 2N3975 , 2N3976 , 2N3977 , 2N3978 , 2N3979 .
