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KSD261Y Specs and Replacement


   Type Designator: KSD261Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
 

 KSD261Y Substitution

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KSD261Y detailed specifications

 8.1. Size:39K  fairchild semi
 ksd261.pdf pdf_icon

KSD261Y

KSD261 Low Frequency Power Amplifier Complement to KSA643 Collector Power Dissipation PC=500mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Col... See More ⇒

Detailed specifications: KSD227 , KSD227G , KSD227O , KSD227Y , KSD261 , KSD261G , KSD261O , KSD261R , NJW0281G , KSD288 , KSD288O , KSD288R , KSD288Y , KSD362 , KSD362N , KSD362O , KSD362R .

Keywords - KSD261Y transistor specs

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