KSD288R Datasheet. Specs and Replacement

Type Designator: KSD288R  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

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KSD288R datasheet

 8.1. Size:42K  fairchild semi

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KSD288R

KSD288 Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage VCBO=80V Collector Dissipation PC=25W(TC=25 C) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-... See More ⇒

Detailed specifications: KSD227Y, KSD261, KSD261G, KSD261O, KSD261R, KSD261Y, KSD288, KSD288O, TIP2955, KSD288Y, KSD362, KSD362N, KSD362O, KSD362R, KSD363, KSD363O, KSD363R

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