All Transistors. KSD288R Datasheet

 

KSD288R Datasheet and Replacement


   Type Designator: KSD288R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

 KSD288R Substitution

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KSD288R Datasheet (PDF)

 8.1. Size:42K  fairchild semi
 ksd288.pdf pdf_icon

KSD288R

KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : VCBO=80V Collector Dissipation : PC=25W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-

Datasheet: KSD227Y , KSD261 , KSD261G , KSD261O , KSD261R , KSD261Y , KSD288 , KSD288O , 2SD669 , KSD288Y , KSD362 , KSD362N , KSD362O , KSD362R , KSD363 , KSD363O , KSD363R .

History: KD650B | NB011E | NB012HI | KC847BT

Keywords - KSD288R transistor datasheet

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