KSD363Y Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD363Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
KSD363Y Transistor Equivalent Substitute - Cross-Reference Search
KSD363Y Datasheet (PDF)
ksd363.pdf
KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=300V Collector Current : IC=6A Collector Dissipation : PC=40W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120
ksd363.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksd363.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD363 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min) Collector Current- IC= 6A Collector Power Dissipation- : PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
