KSD401Y
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSD401Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Collector-Emitter Voltage |Vce|: 150
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 5
MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO220
KSD401Y
Transistor Equivalent Substitute - Cross-Reference Search
KSD401Y
Datasheet (PDF)
8.1. Size:71K fairchild semi
ksd401.pdf
KSD401TV Vertical Deflection Output Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W(TC=25C) Complement to KSB546TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-
8.2. Size:104K inchange semiconductor
ksd401.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD401 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 200V(Min) Collector Current- IC= 2A Collector Power Dissipation- : PC= 25W@ TC= 25 Complement to Type KSB546 APPLICATIONS Designed for TV Vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
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