KSD5018 Datasheet. Specs and Replacement

Type Designator: KSD5018  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 275 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

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KSD5018 datasheet

 ..1. Size:54K  samsung

ksd5018.pdf pdf_icon

KSD5018

KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR TO-220 BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 275 V Emitter Base Voltage VEBO 10 V Collector Current (DC) IC 4 A *Collector Current (Pulse) IC 6 A 1.Base 2.Collec... See More ⇒

 ..2. Size:129K  inchange semiconductor

ksd5018.pdf pdf_icon

KSD5018

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors KSD5018 DESCRIPTION High Breakdown Voltage- V(BR)CEO= 275V(Min) Built-in Resistor Between Base and Emitter Wide Area of Safe Operation APPLICATIONS Designed for motor drive and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto... See More ⇒

 8.1. Size:124K  inchange semiconductor

ksd5017.pdf pdf_icon

KSD5018

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5017 DESCRIPTION High Breakdown Voltage- VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-E... See More ⇒

 9.1. Size:68K  fairchild semi

ksd5041.pdf pdf_icon

KSD5018

KSD5041 AF Output Amplifier for Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter... See More ⇒

Detailed specifications: KSD5010, KSD5011, KSD5012, KSD5013, KSD5014, KSD5015, KSD5016, KSD5017, 2N3055, KSD5041, KSD5041O, KSD5041P, KSD5041Q, KSD5049, KSD5056, KSD5057, KSD5058

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