KSD526 Datasheet. Specs and Replacement

Type Designator: KSD526  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 90 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

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KSD526 datasheet

 ..1. Size:177K  fairchild semi

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KSD526

April 2006 KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC ... See More ⇒

 ..2. Size:260K  onsemi

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KSD526

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: KSD5072, KSD5074, KSD5075, KSD5075T, KSD5076, KSD5078, KSD5080, KSD5090, S8550, KSD526O, KSD526R, KSD526Y, KSD560, KSD560O, KSD560R, KSD560Y, KSD568

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