All Transistors. KSD526Y Datasheet

 

KSD526Y Datasheet and Replacement


   Type Designator: KSD526Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 90 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
 
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KSD526Y Datasheet (PDF)

 8.1. Size:177K  fairchild semi
 ksd526.pdf pdf_icon

KSD526Y

April 2006KSD526NPN Epitaxial Silicon TransistorPower Amplifier Applications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 4 AIB Base Current 0.4 APC

 8.2. Size:260K  onsemi
 ksd526.pdf pdf_icon

KSD526Y

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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