KSD560R Datasheet. Specs and Replacement
Type Designator: KSD560R 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3000
Package: TO220
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KSD560R Substitution
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KSD560R datasheet
KSD560 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc... See More ⇒
Detailed specifications: KSD5080, KSD5090, KSD526, KSD526O, KSD526R, KSD526Y, KSD560, KSD560O, B772, KSD560Y, KSD568, KSD568O, KSD568R, KSD568Y, KSD569, KSD569O, KSD569R
Keywords - KSD560R pdf specs
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BJT Parameters and How They Relate
History: KSD560 | KSD526Y
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