All Transistors. KSD985Y Datasheet

 

KSD985Y Datasheet and Replacement


   Type Designator: KSD985Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20000
   Noise Figure, dB: -
   Package: TO126
 

 KSD985Y Substitution

   - BJT ⓘ Cross-Reference Search

   

KSD985Y Datasheet (PDF)

 8.1. Size:50K  fairchild semi
 ksd985.pdf pdf_icon

KSD985Y

KSD985/986Low Frequency Power Amplifier Low Speed Switching Industrial UseTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage : KSD985 60 V: KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC1959M | 2SC1806 | 2N1132CSM | NA21ZH | NB122EY | ASY51 | ASY58

Keywords - KSD985Y transistor datasheet

 KSD985Y cross reference
 KSD985Y equivalent finder
 KSD985Y lookup
 KSD985Y substitution
 KSD985Y replacement

 

 
Back to Top

 


 
.