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KSD985Y Specs and Replacement


   Type Designator: KSD985Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20000
   Noise Figure, dB: -
   Package: TO126

 KSD985Y Transistor Equivalent Substitute - Cross-Reference Search

   

KSD985Y detailed specifications

 8.1. Size:50K  fairchild semi
 ksd985.pdf pdf_icon

KSD985Y

KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Volage KSD985 60 V KSD986 80 V VEBO Emitter-Base Voltage 8.0 V IC C... See More ⇒

Detailed specifications: KSD882 , KSD882G , KSD882O , KSD882R , KSD882Y , KSD985 , KSD985O , KSD985R , BC639 , KSD986 , KSD986O , KSD986R , KSD986Y , KSE13003 , KSE13004 , KSE13005 , KSE13005F .

Keywords - KSD985Y transistor specs

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