KSE171
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSE171
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Collector Capacitance (Cc): 50
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
TO126
KSE171
Transistor Equivalent Substitute - Cross-Reference Search
KSE171
Datasheet (PDF)
..1. Size:50K fairchild semi
kse170 kse171 kse172.pdf
KSE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : KSE170 - 60 V: KSE171 - 80 V: KSE172 - 100 VVCEO Collector-Emitter Voltage : KSE170 - 40 V: KSE171 - 60
9.1. Size:31K samsung
kse170.pdf
KSE170/171/172 PNP EPITAXIAL SILICON TRANSISTORLOW POWER AUDIO AMPLIFIERTO-126LOW CURRENT, HIGH SPEEDSWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage : KSE170 VCBO -60 V : KSE171 -80 V : KSE172 -100 V Collector-Emitter Voltage : KSE170 VCEO -40 V : KSE171 -60 V : KSE172 -80 V Emitter-Base Voltage VEBO -7 V1. Em
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