KSE700 Datasheet. Specs and Replacement

Type Designator: KSE700  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO126

 KSE700 Substitution

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KSE700 datasheet

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KSE700

KSE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB... See More ⇒

Detailed specifications: KSE45H-1, KSE45H-10, KSE45H-11, KSE45H-2, KSE45H-4, KSE45H-5, KSE45H-7, KSE45H-8, D882, KSE701, KSE702, KSE703, KSE800, KSE801, KSE802, KSE803, KSH112

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