All Transistors. KSH200 Datasheet

 

KSH200 Datasheet and Replacement


   Type Designator: KSH200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO252
 

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KSH200 Datasheet (PDF)

 ..1. Size:156K  fairchild semi
 ksh200.pdf pdf_icon

KSH200

August 2010KSH200NPN Epitaxial Silicon TransistorFeatures D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base

 ..2. Size:252K  inchange semiconductor
 ksh200.pdf pdf_icon

KSH200

isc Silicon NPN Power Transistor KSH200DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power a

Datasheet: KSH117 , KSH117I , KSH122 , KSH122I , KSH127 , KSH127I , KSH13003 , KSH13003I , 2N2222A , KSH200I , KSH210 , KSH210I , KSH29 , KSH2955 , KSH2955I , KSH29C , KSH29CI .

History: TV67 | GC510K | F114 | BC848BDW | GME2002 | 2SB526 | DMC364A2

Keywords - KSH200 transistor datasheet

 KSH200 cross reference
 KSH200 equivalent finder
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