KSH200I Datasheet. Specs and Replacement

Type Designator: KSH200I  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO252

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KSH200I datasheet

 8.1. Size:156K  fairchild semi

 ksh200.pdf pdf_icon

KSH200I

August 2010 KSH200 NPN Epitaxial Silicon Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base ... See More ⇒

 8.2. Size:252K  inchange semiconductor

 ksh200.pdf pdf_icon

KSH200I

isc Silicon NPN Power Transistor KSH200 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power a... See More ⇒

Detailed specifications: KSH117I, KSH122, KSH122I, KSH127, KSH127I, KSH13003, KSH13003I, KSH200, BD335, KSH210, KSH210I, KSH29, KSH2955, KSH2955I, KSH29C, KSH29CI, KSH29I

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