KSH200I Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH200I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO252
KSH200I Transistor Equivalent Substitute - Cross-Reference Search
KSH200I Datasheet (PDF)
ksh200.pdf
August 2010KSH200NPN Epitaxial Silicon TransistorFeatures D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base
ksh200.pdf
isc Silicon NPN Power Transistor KSH200DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power a
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