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KSH200I Datasheet and Replacement


   Type Designator: KSH200I
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO252

 KSH200I Transistor Equivalent Substitute - Cross-Reference Search

   

KSH200I Datasheet (PDF)

 8.1. Size:156K  fairchild semi
 ksh200.pdf pdf_icon

KSH200I

August 2010 KSH200 NPN Epitaxial Silicon Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base ... See More ⇒

 8.2. Size:252K  inchange semiconductor
 ksh200.pdf pdf_icon

KSH200I

isc Silicon NPN Power Transistor KSH200 DESCRIPTION High DC current gain Built-in a damper diode at E-C Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency power a... See More ⇒

Datasheet: KSH117I , KSH122 , KSH122I , KSH127 , KSH127I , KSH13003 , KSH13003I , KSH200 , BD335 , KSH210 , KSH210I , KSH29 , KSH2955 , KSH2955I , KSH29C , KSH29CI , KSH29I .

Keywords - KSH200I transistor datasheet

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