All Transistors. 2N3996 Datasheet

 

2N3996 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3996

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO62

2N3996 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3996 Datasheet (PDF)

1.1. 2n3996smd05.pdf Size:10K _upd

2N3996

2N3996SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herm

1.2. 2n3996smd.pdf Size:10K _upd

2N3996

2N3996SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 1.3. 2n3996-99.pdf Size:54K _microsemi

2N3996
2N3996

TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices Qualified Level JAN 2N3996 2N3997 2N3998 2N3999 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 100 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B 5.0 Collector Current IC Adc 10(

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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