KSH31CI
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH31CI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO252
KSH31CI
Transistor Equivalent Substitute - Cross-Reference Search
KSH31CI
Datasheet (PDF)
8.1. Size:252K inchange semiconductor
ksh31c.pdf
isc Silicon NPN Power Transistor KSH31CDESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP31C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose amplifier low speed switching applicationABSOLUTE MAXIMUM
9.1. Size:55K fairchild semi
ksh31 c.pdf
KSH31/31CGeneral Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31CD-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Uni
9.2. Size:24K samsung
ksh31.pdf
KSH31/31C NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONSLoad Formed for Surface Mount Application(No Suffix)Straight Lead (I.ACK, - I Suffix)1Electrically Similar to Popular TIP31 and TIP31C1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.