KSH41
Datasheet, Equivalent, Cross Reference Search
Type Designator: KSH41
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 6
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO252
KSH41
Transistor Equivalent Substitute - Cross-Reference Search
KSH41
Datasheet (PDF)
..1. Size:74K samsung
ksh41.pdf
KSH41C PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE AMPLIFIERD-PAKLOW SPEED SWITCHING APPLICATIONSD-PACK FOR SURFACE MOUNTAPPLICATIONS Load Formed for Surface Mount Application(No Suffix)1 Straight Lead (I.PACK, - I Suffix) Electrically Similar to Popular TIP41 and TIP41CABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. EmitterCharacteristic Symbol Rating Uni
0.1. Size:53K fairchild semi
ksh41c.pdf
KSH41CGeneral Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11 Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP41 and TIP41C1.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwis
0.2. Size:251K inchange semiconductor
ksh41c.pdf
isc Silicon NPN Power Transistor KSH41CDESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP41C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose amplifierLow speed switching applicationsABSOLUTE MAXI
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