KSH42 Specs and Replacement
Type Designator: KSH42
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO252
KSH42 Substitution
- BJT ⓘ Cross-Reference Search
KSH42 datasheet
KSH42C General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP42C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Coll... See More ⇒
isc Silicon PNP Power Transistor KSH42C DESCRIPTION Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) Electrically similar to popular TIP42C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplifier Low speed switching applications ABSOLUTE MAXI... See More ⇒
Detailed specifications: KSH32I, KSH340, KSH340I, KSH350, KSH350I, KSH41, KSH41C, KSH41CI, 2SD669A, KSH42C, KSH42CI, KSH44H11, KSH44H11I, KSH45H11, KSH45H11I, KSH47, KSH47I
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