KSP8097 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSP8097
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO92
KSP8097 Transistor Equivalent Substitute - Cross-Reference Search
KSP8097 Datasheet (PDF)
8.1. Size:37K fairchild semi
ksp8098 ksp8099.pdf
ksp8098 ksp8099.pdf
KSP8098/8099Amplifier Transistor Collector-Emitter Voltage: VCEO= KSP8098: 60VKSP8099: 80V Collector Power Dissipation: PC (max)=625mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCB
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
