KSP8097 Specs and Replacement
Type Designator: KSP8097
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: TO92
KSP8097 Substitution
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KSP8097 datasheet
KSP8098/8099 Amplifier Transistor Collector-Emitter Voltage VCEO= KSP8098 60V KSP8099 80V Collector Power Dissipation PC (max)=625mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCB... See More ⇒
Detailed specifications: KSP62, KSP63, KSP64, KSP6520, KSP6521, KSP75, KSP76, KSP77, BC337, KSP8098, KSP8099, KSP8598, KSP8599, KSP92, KSP93, KSR1001, KSR1002
Keywords - KSP8097 pdf specs
KSP8097 cross reference
KSP8097 equivalent finder
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