All Transistors. KSP8097 Datasheet

 

KSP8097 Datasheet and Replacement


   Type Designator: KSP8097
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO92
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KSP8097 Datasheet (PDF)

 8.1. Size:37K  fairchild semi
 ksp8098 ksp8099.pdf pdf_icon

KSP8097

KSP8098/8099Amplifier Transistor Collector-Emitter Voltage: VCEO= KSP8098: 60VKSP8099: 80V Collector Power Dissipation: PC (max)=625mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCB

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BUL50A | BC808F | 3DD3040A3 | BCY85 | PMD9010D | FHT9014L | CH3232

Keywords - KSP8097 transistor datasheet

 KSP8097 cross reference
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