KSR1105 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSR1105
SMD Transistor Code: R05
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3.7
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
KSR1105 Transistor Equivalent Substitute - Cross-Reference Search
KSR1105 Datasheet (PDF)
ksr1105.pdf
KSR1105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=10K) Complement to KSR21052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R05BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr1107.pdf
KSR1107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =22K, R2=47K) Complement to KSR21072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R07BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
ksr1109.pdf
KSR1109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR21092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR09RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter
ksr1104.pdf
KSR1104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =47K, R2=47K) Complement to KSR21042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1R04BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
